1 Prof. Alexander Fedotov Belarusian State University Minsk, BelarusCorrection of properties and synthesis of metal-semiconductor-dielectric (MSD) nanocomposite electronic structures using ion-beam technologies Prof. Alexander Fedotov Belarusian State University Minsk, Belarus Co-Authors: J. Fedotova, RI for Nuclear Problems of BSU, Minsk, Belarus E.A. Streltsov, BSU , Minsk, Belarus P.V. Zukowski, Lublin Technical University, Lublin, Poland Yu.E. Kalinin, Voronezh State Technical University, Voronezh, Russia S.I. Tyutyunnikov, JINR, Dubna, Russia P.Yu. Apel, JINR, Dubna, Russia
2 As to material science, the main tasks in context of NICA project is how to use ion technologies for : 1. production of new nanostructured materials;
3 As to material science, the main tasks in context of NICA project is how to use ion technologies for : 1. production of new nanostructured materials; 2. production of nanodevices;
4 As to material science, the main tasks in context of NICA project is how to use ion technologies for : 1. production of new nanostructured materials; 2. production of nanodevices; 3. correction of materials properties; 4. etc.
5 Presentation contains 4 parts:MSI films and structures based on SHI technology which are close to application (looking-for applications people).
6 Presentation contains 4 parts:MSI films and structures based on SHI technology which are close to application (looking-for applications people). 2. Proposals for the use of irradiation (SHI, electrons, protons, neutrons, etc.) for the formation of nanodevices.
7 Presentation contains 4 parts:MSI films and structures based on SHI technology which are close to application (looking-for applications people). 2. Proposals for the use of irradiation (SHI, electrons, protons, neutrons, etc.) for the formation of nanodevices. 3. Proposals for the study of the influence of irradiation (SHI, electrons, protons, neutrons, etc.) on the properties of materials and devices.
8 Presentation contains 4 parts:MSI films and structures based on SHI technology which are close to application (looking-for applications people). 2. Proposals for the use of irradiation (SHI, electrons, protons, neutrons, etc.) for the formation of nanodevices. 3. Proposals for the study of the influence of irradiation (SHI, electrons, protons, neutrons, etc.) on the properties of materials and devices. 4. Presentation of our equipment
9 MSI films and structures based on SHI technology which are close to application (looking-for applications people).
10 TECONASS approach TECONASS - TEmplate-assisted Composite Nanostructures on Semiconducting Substrates
11 TECONASS approach Magnetosensitive Ni/SiO2/Si composite nanostructures with Ni nanorods, distributed in vertical pores of SiO2 layer on Si substrate
12 TECONASS approach TECONASS synthesis is one of the best approaches to form arrays of magnetosensitive transdusers (sensors)
13 TECONASS approach It is based on the filling of vertical mesa- or nanopores in templates by different substances for the formation of nanorod arrays on semiconducting substrates
14 TECONASS approach Ion flow Latent tracks SiO2 Si Irradiationis based on the filling of vertical mesa- or nanopores in templates by different substances using SHI irradiation technology Si SiO2 Latent tracks HF etching Etched tracks (Selective etching) Irradiation Ion flow
15 TECONASS approach (а) (б) Top(а) and cross-section (b) views of SiO2/Si(100)templates with mesapores ______________________________________________________________________________________________________________________________________ Electrochemical deposition of Ni and Cu onto monocrystalline n-Si(100) wafers and into nanopores in Si/SiO2 template / Yu.A. Ivanova, D.K. Ivanou, A.K. Fedotov, E.A. Streltsov, S.E. Demyanov , A.V. Petrov, E.Yu. Kaniukov, D. Fink // J. Mater. Sci. – – Vol. 42. – P. 9163–9169.
16 AFM image of the Ni rod arrayTECONASS approach SEM images of Ni nanorods on surface (a) and chip (b) of the TECONASS structure after pores filling with Ni clusters AFM image of the Ni rod array SiO2 Si Ni
17 TECONASS approach Magnetotransport propertiesB – magnetic induction vector I – current vector The magnetoresponse of «bundles» of Ni nanorods in mesaporous n-Si/SiO2 templates was studied in the temperature range 2 – 300 K and magnetic fields up to 8 Tesla with different orientations of B and I vectors
18 TECONASS approach Temperature dependences of MR12 (B = 8 T) measured at Vtr = 0 and different working currents I12 normal to B and Si substrate plane
19 TECONASS approach MR = 40 000 %Temperature dependencies of MR12(8 T) measured at I12 = 100 nA when transversal biases Vtr = 0 V (1), + 2 V (2) and -2 V (3) were applied. Insert (i) - MR12(8 T) for I12 = 1000 and 100 nA at T = 20 – 20 K.
20 TECONASS approach Resume1. The application of a magnetic field to the n-Si/SiO2/Ni nanostructure caused strong increase of positive magneto- resistance with its huge values of about % at around 25 K at low levels of measuring currents I12 and for Vtr = 0 V. 2. A huge positive magnetoresistive effect in the temperature range of 20 – 30 K can be strongly enhanced (up to 40,000 %) and at 300 K (up to 500 %) when applying transversal biase voltage Vtr = -2 V.
21 TECONASS approach Possible industrial applications is production of 2D (planar) magnetically sensitive matrixes for: 1. Characterization (visualization) of spatial magnetic field distribution (magnetic tomography) 2. Study of magnetic field inhomogeneity by cross section and by depth in channels of superconducting solenoids (at low temperatures) 3. Study of magnetic field distribution in clearances of magnets, magnetic coils with complicated configurations, transformers and other magnetic devices and systems
22 TECONASS approach Proposal for realization:Fabrication of prototypes for magnetically sensitive matrixes for characterization of magnetic field distribution in magnetic systems Fabrication of prototypes for magnetically sensitive matrixes for characterization of spatial distribution of magnetic field in magnetic systems
23 with the bias voltage appliedMSI film nanocomposites with “negative capacitance” effect at the impedance measurements when current is delayed as compared with the bias voltage applied
24 “Negative capacitance” effect with “core-shell” structureis observed in nanogranular composite MSI films containing nanoparticles with “core-shell” structure
25 “Negative capacitance” effect with “core-shell” structureis observed in nanogranular composite MSI films containing nanoparticles with “core-shell” structure Sketch of nanocomposite
26 HRTEM and TEM images for the (FeCoZr)x(Al2O3)1-x nanocomposite filmsStructure and phase composition of the MxI1-x films sintered in in Ar+O2 atmosphere : TEM, HRTEM, XRD, EXAFS, Mossbauer spectroscopy, etc. HRTEM and TEM images for the (FeCoZr)x(Al2O3)1-x nanocomposite films Stabilized granular structure with nanoparticle dimensions DFeCo < 6 nm “Core-shell” nanoparticles due to selective Fe and Co oxidation Core –FeCo(Zr) alloy with bcc crystallinr lattice; Shell – Fe, Co-based oxides with semiconducting properties No agglomeration of metallic nanoparticles at x > 0.70
27 “Negative capacitance” effectL (f) curves (left) and modulo C(f) dependences (right) for the as-deposited (FeCoZr)0.42(PZT)0.58 sample for different measuring temperatures
28 “Effective” inductive impedance contributionL 20 H/m3 up to 10 MHz p-n-p heterojunctions: H/m2 Archimedean spiral: H/m2 Polymer nanocomposites: 10-6 H/m2 What is the next step to use this huge NC effect for electric engineering components production (for example, in ICs)?
29 One of possible applications in ICs:Replacing gyrator - impedance inverter or phase shifter Small piece of nanocomposite film with “effective” inductive impedance L 20 H/m3 up to 10 MHz replaces gyrator
30 We are looking for partners for the implementation of this idea !!!The first basic idea of this proposal is to use methods of planar silicon technology to create a planar nano- and microinductors: Substitution of alumina or PZT matrixes on the silica; Formation of oxidized metallic nanoparticles with the “core-shell” structure in silicon oxide by ion implantation of metallic ions in oxygen-containing atmosphere with the following annealing procedure Little piece of nanocomposite film with “effective” inductive impedance L 20 H/m3 up to 10 MHz replaces gyrator
31 2. Proposals for the use of irradiation (SHI, electrons, protons, neutrons, etc.) for the formation of nanodevices.
32 The engineering of graphene-based field effect transistor (GFET) with high-frequency performance requires opening up a Bandgap GFET The energy dispersion close to the K-points for (i) single-layer (ii) nanoribbons (iii) bilayer with zero electric field (iv) bilayer in the presence of an electric field. [Frank Schwierz. "Graphene transistors". In: Nat Nano 5.7 (2010), pp DOI /nnano ]
33 The engineering of graphene-based field effect transistor (GFET) with high-frequency performance requires opening up a Bandgap GFET The Major Ways of Graphene Bandgap Engineering are using of Nanoribbons or Nanomesh The energy dispersion close to the K-points for (i) single-layer (ii) nanoribbons (iii) bilayer with zero electric field (iv) bilayer in the presence of an electric field. [Frank Schwierz. "Graphene transistors". In: Nat Nano 5.7 (2010), pp DOI /nnano ]
34 The engineering of graphene-based field effect transistor (GFET) with high-frequency performance requires opening up a Bandgap GFET The Major Ways of Graphene Bandgap Engineering are using of Nanoribbons or Nanomesh But nanoribbons are not compatible with the current complementary CMOS lithographic process The energy dispersion close to the K-points for (i) single-layer (ii) nanoribbons (iii) bilayer with zero electric field (iv) bilayer in the presence of an electric field. [Frank Schwierz. "Graphene transistors". In: Nat Nano 5.7 (2010), pp DOI /nnano ]
35 The best way is the formation of Graphene Nanomesh (GNM)with periodic distribution of holes in graphene Transistor with graphene nanomesh [Jingwei Bai et al. "Graphene nanomesh". In : Nat Nano 5.3 (2010), pp DOI: /nnano ]
36 The best way is the formation of Graphene Nanomesh (GNM)with periodic distribution of holes in graphene Transistor layout with graphene nanomesh periodicity neck width Advantages of Graphene Nanomesh Use: Nanomeshes support higher currents than nanoribbons. Compatible with the current fabrication process. Electric properties are total controlled by the periodicity and the neck width. [Jingwei Bai et al. "Graphene nanomesh". In : Nat Nano 5.3 (2010), pp DOI: /nnano ]
37 The best Method of Graphene Nanomesh (GNM) Fabricationis the use of irradiation by protons and heavy ions (up to gold) with extreme energies (GeV) The potential applications for GNM are a new generation of spintronics, chemical sensing, supercapacitors, DNA sequencing, photothermal therapy.
38 3. Proposals for the study of the influence of SHI irradiation on the properties of materials and devices.
39 Graphene irradiated by swift heavy ionsGraphene structure modification using controlled defect induction, to control the mean free path length of the charge carriers and the conductivity Xe, 160 MeV Basic mechanisms of defect formation: substrate sputtering hot electrons produced near the interface recoil atoms of substrate Interdefect distance
40 Influence of SHI irradiation on phase composition in (FeCoZr)73(CaF2)27initial irradiated α-Fe2O3 α-FeCo(Zr) metal : oxide ~ 40 : 60 metal : oxide ~ 60 : 40
41 We also offer a study the effect of irradiation of high-energy particles onthe properties of coatings for protection of electronic devices using a bismuth-based films;
42 We also offer a study the effect of irradiation of high-energy particles onthe properties of coatings for protection of electronic devices using a bismuth-based films; the degradation of high-temperature materials for thermoelectric generators for spacecrafts for deep space;
43 We also offer a study the effect of irradiation of high-energy particles onthe properties of coatings for protection of electronic devices using a bismuth-based films; the degradation of high-temperature materials for thermoelectric generators for spacecrafts for deep space; the degradation of characteristics of the superconducting cables used in a magnetic accelerator system of colliding beams
44 4. Presentation of our equipment
45 Confocal spectrometer for micro-Raman and micro-PL analysis “Nanofinder HE” (LOTIS-TII, Belarus – Japan): Close-cycle cryostat (down to 20 K) 4 excitation lasers (355, 473, 532 and 785 nm); Spectral resolution as good as 0.01 nm; Spatial resolution as good as 200 nm (lateral)/500 nm (vertical) at 300 K; Defect distribution in Graphene
46 Closed-cycle cryogen-free measuring system (Cryogenic Ltd., London):Temperature range 1.7 – 305 K with temperature stabilization K per hour; Magnetic field up to 8 T in semiconductor solenoid with internal diameter 28 mm; DC and AC (20 Hz – 30 MHz) measurements of I-V, resistance, Hall effect; Voltage source from 5 µV to 210 V; measurable voltage from 10 pV to 211 V; Current source from 0.5 fA to 105 mA; measurable current from 10 aA to 105.5 mA. Measurable resistance from 100 µΩ (<100µΩ in manual ohms) to 21.1 TΩ. (а) (б) Magnetoresistance of the 2D electronic gas in delta-layer in Si before (a) and after (b) SHI exposure at different temperatures: 1 – 300 K; 2 – 200 K; 3 – 150 K; K; 5 – 50 K; K; 7 – 10 K; K; 9 – 5 K; K
47 Closed-cycle cryogen-free measuring system (Cryogenic LtdClosed-cycle cryogen-free measuring system (Cryogenic Ltd., London) for the study of magnetic, thermal and thermoelectric properties in the temperature range 1.7 – 305 K and magnetic fields up to 8 T: Seebeck effect; Thermal conductance; Vibrating Sample Magnetometer with ZFC- and NZFC-regimes; Low-frequency Magnetoimpedance. Seebeck coefficient S(T) of Bi-Sn alloys depending on temperature T at magnetic fields B =0 (a) and B = 8 T (b) a b
48 UV-Vis-IR spectrometer MC122 (Proscan Special Instruments):Spectral range from 190 to 1100 nm; Absorption, reflection; Photocurrent spectra.
49 Mössbauer spectrometer with closed-cycle refrigeration system (Janis):Allows to make measurements in the temperature range 4 – 300 К with precise control of temperature; Allows to realize measurements in the transmission and reflection modes. Mossbauer spectra of (FeCoZr)x(CaF2)1-x (29 < x < 73 at.%) in granular films deposited on Al foil in Ar (a) and Ar + O2 at PO = 4.3 mPa (b) atmospheres
50 Fedotov A.K. Thank you for attention
51 Ion-beam sputtering of nanogranular composite MxI1-x filmsChamber for deposition of films 1 – vacuum chamber 2 – circling drum for substrates 3 – sputtered targets 4 – ion-beam source 5 – source for ion-beam cleaning 6 – compensators 7 – dielectric substrates 8 – ion beams 9 – sputtered ions Compound target Variable regimes: Substrate temperature Composition of target Atmosphere of deposition
52 “Negative capacitance” effect: hopping modelP. Żukowski, T. Kołtunowicz, J. Partyka, Yu.A. Fedotova, A.V. Larkin, Vacuum, 83 (2009) S280-S283. E = 0 Nanoparticles are neutral potential wells before bias voltage application
53 “Negative capacitance” effect: hopping modelNanoparticles are neutral potential wells before bias voltage application Jump of electron between two wells Violation of electro neutrality & formation of dipole Polarization of I matrix & growth of the e- lifetime m on the well P. Żukowski, T. Kołtunowicz, J. Partyka, Yu.A. Fedotova, A.V. Larkin, Vacuum, 83 (2009) S280-S283. E = 0 E > 0
54 “Negative capacitance” effect: hopping modelNanoparticles are neutral potential wells before bias voltage application Jump of electron between two wells Violation of electro neutrality & formation of dipole Polarization of I matrix & growth of the e- lifetime m on the well Equations: P. Żukowski, T. Kołtunowicz, J. Partyka, Yu.A. Fedotova, A.V. Larkin, Vacuum, 83 (2009) S280-S283. E = 0 E > 0 E 300 meV m 10-3 – 10-4 s
55 “Negative capacitance” effect: hopping modelP. Żukowski, T. Kołtunowicz, J. Partyka, Yu.A. Fedotova, A.V. Larkin, Vacuum, 83 (2009) S280-S283. E = 0 E > 0 For f > fmin we observe the phase delay 2fm of current as compared with voltage biase applied. This creates the possibility for positive angles of the phase shifts and properly NC effect (domination of inductive-like contribution to impedance of the films).
56 Planar miniature non-coil-like inductors for ICs“Negative capacitance” effect Planar miniature non-coil-like inductors for ICs 1 – sputtered nanocomposite film, 2 – insulating layer , – base silicon substrate, – metallic contacts, – photomask, – flux of sputtered atoms Our main result: “Effective” inductive impedance contribution L 20 H/m3 up to 10 MHz p-n-p heterostructures: H/m2 Archimedean spiral: H/m2 Polymer nanocomposites: 10-6 H/m2 Patent applications: Non coil-like inductivities for microelectronic schemes, Polish patent P (2012) Capacitor-inductivity scheme for electronic devices, Polish patent P (2010)